DocumentCode :
2151367
Title :
MIXSELs - a new class of ultrafast semiconductor lasers
Author :
Maas, D.J.H.C. ; Bellancourt, A.R. ; Rudin, B. ; Golling, M. ; Unold, H.J. ; Sudmeyer, Thomas ; Keller, U.
Author_Institution :
ETH Zurich, Zurich
fYear :
2007
fDate :
17-22 June 2007
Firstpage :
1
Lastpage :
1
Abstract :
A modelocked integrated external-cavity surface emitting laser (MIXSEL) is demonstrated for the first time. This device used the absorber-gain integration to enable modelocking with the simplest cavity. Molecular beam epitaxy (MBE) was used to grow the MIXSEL structure. The structure was optically pumped at an angle of 45deg by a diode laser at 808 nm. This new-class of passively modelocked semiconductor lasers will potentially enable the realization of robust, ultra-compact multi-GHz sources.
Keywords :
high-speed optical techniques; laser cavity resonators; laser mode locking; molecular beam epitaxial growth; optical pumping; surface emitting lasers; MBE; absorber-gain integration; diode laser; modelocked integrated external-cavity surface emitting laser; molecular beam epitaxy; optical pumping; passively modelocked semiconductor lasers; ultracompact multiGHz sources; ultrafast semiconductor lasers; wavelength 808 nm; Laser excitation; Laser modes; Molecular beam epitaxial growth; Optical pumping; Pump lasers; Semiconductor lasers; Semiconductor process modeling; Stimulated emission; Surface emitting lasers; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2007.4386010
Filename :
4386010
Link To Document :
بازگشت