DocumentCode
2151486
Title
Static Gain Saturation Spectra of Quantum Dot Optical Amplifiers: The Role of Excited to Ground State Relaxation
Author
Laemmlin, M. ; Meuer, C. ; Kim, J. ; Bimberg, D. ; Eisenstein, G.
Author_Institution
Tech. Univ. Berlin, Berlin
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
This paper demonstrates that quantum dot optical amplifiers with significant excited state occupation exhibit symmetric saturation spectra due to very efficient carrier relaxation between excited and depleted ground states.
Keywords
III-V semiconductors; carrier relaxation time; excited states; gallium arsenide; ground states; indium compounds; infrared spectra; laser beams; optical saturation; quantum dot lasers; semiconductor optical amplifiers; superradiance; ASE; InGaAs-GaAs; amplified spontaneous emission spectra; excited state relaxation; ground state relaxation; quantum dot optical amplifiers; static gain saturation spectra; Optical amplifiers; Optical distortion; Optical pumping; Optical saturation; Pulse amplifiers; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Stationary state; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386016
Filename
4386016
Link To Document