DocumentCode :
2151486
Title :
Static Gain Saturation Spectra of Quantum Dot Optical Amplifiers: The Role of Excited to Ground State Relaxation
Author :
Laemmlin, M. ; Meuer, C. ; Kim, J. ; Bimberg, D. ; Eisenstein, G.
Author_Institution :
Tech. Univ. Berlin, Berlin
fYear :
2007
fDate :
17-22 June 2007
Firstpage :
1
Lastpage :
1
Abstract :
This paper demonstrates that quantum dot optical amplifiers with significant excited state occupation exhibit symmetric saturation spectra due to very efficient carrier relaxation between excited and depleted ground states.
Keywords :
III-V semiconductors; carrier relaxation time; excited states; gallium arsenide; ground states; indium compounds; infrared spectra; laser beams; optical saturation; quantum dot lasers; semiconductor optical amplifiers; superradiance; ASE; InGaAs-GaAs; amplified spontaneous emission spectra; excited state relaxation; ground state relaxation; quantum dot optical amplifiers; static gain saturation spectra; Optical amplifiers; Optical distortion; Optical pumping; Optical saturation; Pulse amplifiers; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Stationary state; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2007.4386016
Filename :
4386016
Link To Document :
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