Title :
A body-biased wide-band VCO
Author :
Chen, Hwan-Mei ; Jhuang, You-Da ; Chen, Shih-Wei
Author_Institution :
Dept. of Electron. Eng., Lunghwa Univ. of Sci. & Technolgy, Taoyuan, Taiwan
Abstract :
In this paper, a 3.24 GHz~4.56 GHz wide-band voltage-controlled oscillator (VCO) fabricated in a 0.18 ¿m 1P6M CMOS process is presented. This VCO is designed with a CMOS complementary-Gm oscillator topology, features two accumulation mode MOS varactors, and body-biased pMOSs. With 1.8 V power supply, when center frequency is 3.547 GHz, the phase noise is -119.2 dBc/Hz at 1 MHz offset. The oscillation frequency can be tuned from 3.24 GHz to 4.46 GHz. The best figure of merit (FoM) is -181.18 dB, the maximum power consumption is 16.2 mW.
Keywords :
CMOS integrated circuits; MOSFET; phase noise; semiconductor device noise; varactors; voltage-controlled oscillators; 1P6M CMOS process; CMOS complementary-Gm oscillator topology; accumulation mode MOS varactor; body-biased pMOS; body-biased wide-band VCO; figure of merit; frequency 3.24 GHz to 4.46 GHz; frequency 3.547 GHz; oscillation frequency; phase noise; power 16.2 mW; voltage 1.8 V; voltage-controlled oscillator; 1f noise; Capacitors; Circuit topology; Energy consumption; Frequency; Phase noise; Tuning; Varactors; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734881
