Title :
Design guidelines for deep-submicrometer MOSFETs
Author :
Jeng, M. ; Chung, J. ; Moon, J.E. ; May, G. ; Ko, P.K. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A comprehensive study of the performance and reliability constraints on the dimensions and power supply of deep-submicrometer non-LDD (lightly doped drain) n-channel MOSFETs is presented. Design guidelines extracted from experimental results are presented that are based on the following factors: short-channel effects; drain-induced barrier-lowering effects, off-state leakage currents, hot-electron reliability, time-dependent dielectric breakdown, current-driving capability, voltage gain, and switching speed. The relative importance of each mechanism for a given technology and design is examined. As an example, a set of design curves using typical performance and reliability criteria is provided for n-channel deep-submicrometer devices. With slight modifications, these design curves can also be extended to other technologies, including p-channel and LDD devices.<>
Keywords :
design engineering; insulated gate field effect transistors; reliability; current-driving capability; deep-submicrometer MOSFETs; design curves; dimensions; drain-induced barrier-lowering effects; hot-electron reliability; n-channel MOSFETs; off-state leakage currents; power supply; reliability constraints; short-channel effects; switching speed; time-dependent dielectric breakdown; voltage gain; Current measurement; Dielectric measurements; Guidelines; Ice; Leakage current; MOSFETs; Moon; Power engineering computing; Power supplies; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32837
