DocumentCode
2151880
Title
Technology and physics of polysilicon emitters
Author
Schaber, Hans ; Meister, Thomas F.
Author_Institution
Siemens AG, Muenchen, West Germany
fYear
1989
fDate
18-19 Sep 1989
Firstpage
75
Lastpage
81
Abstract
Basic models proposed to explain the polysilicon emitter effect are reviewed, and the present status of polysilicon emitter modeling is summarized. The present state of the technology is described, and its advantages are discussed. Optimization of forward transit time and speed limitations of polysilicon emitter devices are examined
Keywords
bipolar integrated circuits; bipolar transistors; elemental semiconductors; semiconductor device models; silicon; emitter modeling; forward transit time optimisation; models; polycrystalline Si; polysilicon emitters; speed limitations; Charge carrier processes; Doping; Frequency; Iron; Photonic band gap; Physics; Production; Reproducibility of results; Silicon; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1989.69463
Filename
69463
Link To Document