A CMOS TDI readout circuit for infrared focal plane array

Author

Chen, Zhongjian ; Lu, Wengao ; Tang, Ju ; Zhang, Yacong ; Junmin, Cao ; Ji, Lijiu

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Peking, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1765

Lastpage

1768

Abstract

A new structure 288 Ã— 4 CMOS time delay and integration (TDI) readout integrated circuit (ROIC) is presented in this paper. The TDI function is implemented using an integration and storage circuit array and a charge amplifier with the advantages of low power and compact layout. An experimental chip has been designed and fabricated in 0.5 Â¿m double-poly-three-metal CMOS technology. Bi-directional TDI, defective element deselection and two-gain option (1.015 pC/2.03 pC) functions have been realized in the experimental chip and measurement results at liquid nitrogen temperature indicated that all functions were correct and performance satisfied the requirement of long waveform IRFPA. The readout speed of each out can reach 5 MHz and the dynamic range is 75.6 dB.

Keywords

CMOS integrated circuits; amplifiers; delay circuits; integrated circuit design; integrating circuits; readout electronics; 288 Ã\x97 4 CMOS time delay and integration readout integrated circuit; CMOS TDI readout circuit; charge amplifier; defective element deselection; double-poly-three-metal CMOS technology; frequency 5 MHz; infrared focal plane array; integration circuit array; storage circuit array; two-gain option functions; Bidirectional control; CMOS technology; Circuit testing; Delay effects; Detectors; Microelectronics; Signal detection; Switches; Systolic arrays; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734896

Filename

4734896