DocumentCode
2152132
Title
Simulation of stressed FBAR thanks to a perturbation method
Author
Masson, Jean-Francois ; Reinhardt, Andreas ; Ballandras, S.
Author_Institution
Inst. FEMTO-ST, UMR CNRS 6174, Besancon, France
fYear
2005
fDate
12-17 June 2005
Abstract
Film bulk acoustic resonators (FBAR) are spreading over more and more applications. First used for telecom purposes (duplexers), they also are employed for sensor applications as presented by Mansfeld and Kotelyansky (2002). As surface acoustic wave (SAW) devices, FBAR are sensitive to external physical parameters such as temperature and stresses. In this paper, we discuss a way to simulate the effect of quasi-static stresses on FBAR thanks to a perturbation method.
Keywords
bulk acoustic wave devices; perturbation theory; stress effects; surface acoustic wave resonators; film bulk acoustic resonators; perturbation methods; quasi-static stress effects; stressed FBAR simulation; surface acoustic wave devices; Film bulk acoustic resonators; Perturbation methods; Resonant frequency; Surface acoustic wave devices; Surface acoustic waves; Telephony; Temperature dependence; Temperature sensors; Tensile stress; Ultrafast electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1516617
Filename
1516617
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