Title :
High-efficiency heterostructure-barrier-varactor frequency triplers using AlN substrates
Author :
Qun Xiao ; Hesler, J.L. ; Crowe, Thomas W. ; Yiwei Duan ; Deaver, Bascom S.
Author_Institution :
Charles L. Brown Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA, USA
Abstract :
The effects of heat dissipation and its implications for heterostructure barrier varactor (HBV) frequency multiplier design are investigated. Although this work focuses on the HBV as a research model, the analysis is applicable, in general, to all solid-state devices and circuits. To demonstrate and evaluate the thermal analysis presented in this work, several 300 GHz HBV frequency triplers are designed, fabricated, and tested. In particular, an HBV tripler fabricated on an aluminum nitride (AlN) substrate is shown to yield state-of-the-art performance, resulting in a conversion efficiency of 8% and 9.5 mW output power at 300 GHz.
Keywords :
aluminium compounds; cooling; frequency multipliers; millimetre wave circuits; millimetre wave frequency convertors; submillimetre wave circuits; thermal analysis; varactors; wide band gap semiconductors; 300 GHz; 8 percent; 9.5 mW; HBV frequency triplers; heat dissipation effects; heterostructure barrier varactors; solid-state circuits; solid-state devices; thermal analysis; Capacitance; Circuits; Frequency conversion; Millimeter wave technology; Power amplifiers; Power generation; Schottky diodes; Submillimeter wave technology; Thermal conductivity; Varactors;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516624