DocumentCode :
2152293
Title :
High-efficiency heterostructure-barrier-varactor frequency triplers using AlN substrates
Author :
Qun Xiao ; Hesler, J.L. ; Crowe, Thomas W. ; Yiwei Duan ; Deaver, Bascom S.
Author_Institution :
Charles L. Brown Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA, USA
fYear :
2005
fDate :
12-17 June 2005
Abstract :
The effects of heat dissipation and its implications for heterostructure barrier varactor (HBV) frequency multiplier design are investigated. Although this work focuses on the HBV as a research model, the analysis is applicable, in general, to all solid-state devices and circuits. To demonstrate and evaluate the thermal analysis presented in this work, several 300 GHz HBV frequency triplers are designed, fabricated, and tested. In particular, an HBV tripler fabricated on an aluminum nitride (AlN) substrate is shown to yield state-of-the-art performance, resulting in a conversion efficiency of 8% and 9.5 mW output power at 300 GHz.
Keywords :
aluminium compounds; cooling; frequency multipliers; millimetre wave circuits; millimetre wave frequency convertors; submillimetre wave circuits; thermal analysis; varactors; wide band gap semiconductors; 300 GHz; 8 percent; 9.5 mW; HBV frequency triplers; heat dissipation effects; heterostructure barrier varactors; solid-state circuits; solid-state devices; thermal analysis; Capacitance; Circuits; Frequency conversion; Millimeter wave technology; Power amplifiers; Power generation; Schottky diodes; Submillimeter wave technology; Thermal conductivity; Varactors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1516624
Filename :
1516624
Link To Document :
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