Semimetal-semiconductor junctions for low noise zero-bias rectifiers

ErAs and InAlGaAs heterojunctions promise to act as low noise Schottky diode. In this paper, we present responsivity measurements and 2-8 GHz tangential sensitivity measurements on a room-temperature zero-bias rectifier intended for use in THz imaging arrays. This interface promises to allow for a room-temperature zero-bias rectifier that significantly simplifies detector design, mitigates current induced flicker and burst noise, and eliminates bias circuitry and related noise, potentially leading to a square-law detector with a noise floor of ∼10^-12 W/Hz¹2 /. The ability to tune barrier height, responsivity, capacitance and differential resistance is also investigated.