Title :
Large-signal modeling of high-voltage GaAs power HBTs
Author :
Rudolph, Matthias ; Doerner, Ralf
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
This paper presents modeling results for newly developed InGaP/GaAs power HBTs operating at bias voltages up to VCE = 26 V. The devices are flip-chip mounted for heat-sinking and deliver output powers above 10 W. It is shown that the FBH HBT model is capable of describing those devices despite the fact that it was developed originally for standard ´low-voltage´ HBTs. This result is an important statement with respect to circuit design based on this promising technology.
Keywords :
III-V semiconductors; flip-chip devices; gallium arsenide; gallium compounds; heat sinks; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor device models; InGaP-GaAs; equivalent circuits; flip-chip mounting; heat sinking; heterojunction bipolar transistors; high-voltage power HBT; large-signal modeling; semiconductor device modeling; Circuit synthesis; Electronic mail; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Semiconductor device modeling; Standards development; Thermal management; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516628
