Title :
Design and test results of a front-end ASIC for radiation detectors
Author :
Yacong, Zhang ; Zhongjian, Chen ; Wengao, Lu ; Lijiu, Ji ; Baoying, Zhao
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Peking, China
Abstract :
A front-end ASIC for semiconductor radiation detectors is presented. It is composed of a Charge Sensitive Amplifier (CSA), a pulse shaper, and a Peak Detect and Hold (PDH) circuit. Poly-resistor is used as source degeneration component to reduce the noise of current source in the CSA. The ASIC has been designed in a 0.5 ¿m CMOS DPTM technology and tested with Verigy 93000. The gain (PDH excluded) is 78.5 mV/fC and the Equivalent Noise Charge (ENC) with detector disconnected is 800-900 e. The power dissipation without the output buffer is about 2.6 mW.
Keywords :
CMOS integrated circuits; amplifiers; application specific integrated circuits; integrated circuit design; integrated circuit noise; integrated circuit testing; peak detectors; radiation detection; readout electronics; resistors; CMOS DPTM technology; Peak Detect and Hold circuit; Poly-resistor; charge sensitive amplifier; current source; equivalent noise charge; front-end ASIC; output buffer; power dissipation; readout ASIC; semiconductor radiation detectors; source degeneration component; Application specific integrated circuits; CMOS technology; Circuit noise; Circuit testing; Pulse amplifiers; Pulse circuits; Pulse shaping methods; Radiation detectors; Semiconductor device noise; Semiconductor radiation detectors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734911
