Atomic layer epitaxy of ZnO for substrates for GaN epitaxy

Author

Godlewski, M. ; Szczerbakow, A. ; Kopalko, K. ; Lusakowska, E. ; Butcher, K.S.A. ; Goldys, E.M. ; Tansley, T.L. ; Barski, A.

Author_Institution

Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

13

Lastpage

16

Abstract

ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, or from elemental components, i.e., from zinc and oxygen. We have also studied ZnO layers prepared by the oxidisation of ZnS layers. Silicon ([001] and [111]), GaAs, sapphire, sapphire/GaN or soda lime glass substrates have been used. We demonstrate that ZnO films are suitable as buffer layers for GaN epitaxy.

Keywords

III-V semiconductors; atomic layer epitaxial growth; calcium compounds; chemical exchanges; elemental semiconductors; gallium arsenide; gallium compounds; oxidation; sapphire; semiconductor epitaxial layers; silicon; sodium compounds; substrates; wide band gap semiconductors; zinc compounds; Al₂O₃; Al₂O₃GaN; GaAs; GaN; GaN epitaxy; Na₂OCaOSiO₂; Si; ZnO; ZnO films; ZnS; ZnS layers; atomic layer epitaxy; buffer layers; double exchange chemical reaction; gas flow version; oxidisation; sapphire substrate; sapphire/GaN substrate; silicon; single exchange reaction; soda lime glass substrate; Atomic layer deposition; Chemical elements; Epitaxial growth; Fluid flow; Gallium arsenide; Gallium nitride; Silicon; Substrates; Zinc compounds; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237178

Filename

1237178