Title :
Status of millimeter-wave MMIC´s and their applications in Japan
Author :
Hirachi, Yasutake ; Kuroda, Shigeru
Author_Institution :
Fujitsu Quantum Devices LTD., Hachioji Daiichi-Seimei Bldg.. 11 F, 3-20-6 Myojin-cho, Hachioji-shi, Tokyo 192-0046, Japan. Phone: +81-426-48-5793, Fax: +81-426-48-5872, E-mail: hirati@to.fqd.fujitsu.co.jp
Abstract :
A 50 nm-gate lattice-matched InAlAs/InGaAs HEMT with the cutoff frequency of 362 GHz was developed. A K-band power amplifier module achieved the output power of 33.5 dBm at 24 GHz. A miniature and broadband p-HEMT LNA MMIC exhibited the gain of 14.5 dB and the noise figure of 1.7 dB at 26 GHz. A set of 76 GHz fully MMIC chips based on the 0.15 ¿m-gate p-HEMT process was developed for the car radar systems. Low-price, small-size and easily usable 60 GHz modules are expected by mm-wave home-link use.
Keywords :
Broadband amplifiers; Cutoff frequency; HEMTs; Indium compounds; Indium gallium arsenide; K-band; MMICs; Millimeter wave radar; Power amplifiers; Power generation;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338649
