Longitudinal mode behavior of a lateral-junction edge-emitting laser diode

Author

Ocampo, JosC M Zanardi ; Vaccaro, Pablo O. ; Saravanan, Shanmugam ; Kubota, K. ; Aida, Tabito

Author_Institution

ATR Adaptive Commun. Res. Labs., Kyoto, Japan

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

33

Lastpage

36

Abstract

Optoelectronic devices based on lateral junctions are particularly interesting because carriers are injected perpendicular to both the optical cavity and the direction of quantum confinement (i.e. the epitaxial growth direction). An edge-emitting InGaAs/GaAs laser diode with a lateral p-n junction was fabricated by MBE on a patterned GaAs (311)A substrate. The injection current dependence of the multimode emission was studied. Experimental results revealed a gain spectrum that favors long-wavelength modes as injection current increases.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; molecular beam epitaxial growth; optoelectronic devices; p-n junctions; quantum well lasers; semiconductor epitaxial layers; GaAs; GaAs (311)A substrate; InGaAs-GaAs; MBE; carrier injection; edge-emitting laser diode; epitaxial growth direction; gain spectrum; injection current; lateral p-n junction; lateral-junction laser diode; long-wavelength modes; longitudinal mode behavior; multimode emission; optical cavity; optoelectronic devices; quantum confinement; Diode lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical devices; Optoelectronic devices; P-n junctions; Potential well; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237182

Filename

1237182