Zinc oxide as a contact material for p-GaN

Author

Kaminska, E. ; Piotrowska, A. ; Barcz, A. ; Golaszewska, K. ; Kuchuk, A. ; Szade, J. ; Winiarski, A. ; Wawro, A. ; Jasinski, J. ; Liliental-Weber, Z.

Author_Institution

Inst. of Electron Technol., Warsaw, Poland

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

41

Lastpage

44

Abstract

The fabrication procedure of transparent and conducting ZnO films yielding ohmic contacts to p-GaN has been developed. The microstructure and electronic properties of p-GaN/ZnO interface were studied using atomic force and electron transmission microscopies, and X-ray photoelectron spectrometry. The observed ohmic behaviour is explained in terms of formation of a tunnelling p-GaN/ n⁺-ZnO junction.

Keywords

III-V semiconductors; X-ray photoelectron spectra; atomic force microscopy; crystal microstructure; electro-optical effects; gallium compounds; ohmic contacts; optical films; p-n junctions; semiconductor growth; semiconductor thin films; transparency; tunnelling; wide band gap semiconductors; zinc compounds; -ray photoelectron spectrometry; ZnO-GaN; atomic force microscopy; conducting ZnO films; contact material; electron transmission microscopy; electronic properties; microstructure; ohmic contacts; p-GaN; transparent Zno films; tunnelling p-GaN/ n⁺-ZnO junction; zinc oxide; Atomic force microscopy; Conducting materials; Conductive films; Fabrication; Microstructure; Ohmic contacts; Photoelectron microscopy; Spectroscopy; Transmission electron microscopy; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237184

Filename

1237184