Title :
Growth of AlxGa1-xN by plasma assisted MOCVD
Author :
Arifin, P. ; Sugianto ; Suprianto, E. ; Wendri, N. ; Sutanto, H. ; Budiman, M. ; Barmawi, M.
Author_Institution :
Dept. of Phys., ITB, Bandung, Indonesia
Abstract :
Thin films AlxGa1-xN were grown on (0001) sapphire substrates by plasma assisted metal-organic chemical vapor deposition (PA-MOCVD). Plasma-cracked N2, trimethylaluminum (TMAl) and trimethylgallium (TMGa) were used as nitrogen, aluminum and gallium sources, respectively. The results of energy dispersive X-ray (EDX) measurements performed at room temperature yielded the linear dependence of molar fraction of Al (x) on molar fraction of vapor phase of TMAl/(TMAl + TMGa). The dependence of the band gap energy on the molar fraction of Al (x) showed quadratic expression, Eg (x) = 3.35 + 1.55x + 1.3x2 eV. AlxGa1-xN layers with x < 0.34 show n-type conduction with room temperature mobilities in the range of 5 to 10 cm2/V·s, and electron concentrations of 9.0 × 1016 to 1.4 × 1019cm-3.
Keywords :
III-V semiconductors; MOCVD; X-ray chemical analysis; aluminium compounds; electron mobility; energy gap; gallium compounds; plasma materials processing; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 20 degC; Al2O3; AlxGa1-xN; aluminum source; band gap energy; electron concentrations; energy dispersive X-ray measurements; gallium source; mobilities; molar fraction; n-type conduction; nitrogen source; plasma assisted MOCVD; plasma assisted metal-organic chemical vapor deposition; plasma-cracked N2; room temperature; sapphire substrates; thin film growth; trimethylaluminum; trimethylgallium; Aluminum; Chemical vapor deposition; Gallium; Nitrogen; Plasma chemistry; Plasma measurements; Plasma sources; Plasma temperature; Plasma x-ray sources; Sputtering;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237185
