High gain lateral bipolar transistor

The authors describe a submicron BiMOS process in which the lateral BJTs (bipolar junction transistors) are so similar to the MOSFETs that no extra process steps are needed. A lateral npn BJT with beta higher than 1000 has been demonstrated. A lateral pnp BJT with high cutoff frequency has been demonstrated, provided the parasitic capacitances are minimized. It is believed that this lateral BJT can be utilized in many applications because it is inherently available in any submicron CMOS process that has been properly designed. Similarly, in a submicron n-well BiCMOS process with vertical npn BJT, a lateral pnp BJT (with high beta ) can be made available without any additional processing if the p-MOSFET is properly designed.<>