Title :
Characterization of multilayer self-organized InAs quantum dot embedded waveguides at 1.3 and 1.5 μm
Author :
Akca, B.I. ; Dana, A. ; Aydinli, A. ; Rossetti, M. ; Li, L. ; Fiore, A. ; Dagli, N.
Author_Institution :
Bilkent Univ., Ankara
Abstract :
In this paper, we characterized the electro-optic coefficient and loss of multilayer InAs quantum dot laser structures at 1309 and 1515 nm. Quantum dot waveguides were grown by molecular beam epitaxy, where the active region is formed by three or five layers of self-assembled InAs QDs. Loss characterization were carried out by using a 1.3 μm light from a thermally tunable laser. Transmission through the device was recorded as a function of wavelength. Loss coefficient is found to be wavelength and bias voltage dependent.
Keywords :
III-V semiconductors; electro-optical effects; indium compounds; laser tuning; molecular beam epitaxial growth; optical losses; optical testing; optical waveguides; quantum dot lasers; self-assembly; semiconductor device testing; InAs; electro-optic coefficient; embedded waveguides; loss coefficient; molecular beam epitaxy; multilayer self-organized quantum dot laser; self-assembled QD; thermally tunable laser; wavelength 1309 nm; wavelength 1515 nm; Lasers and electrooptics; Nonhomogeneous media; Optical modulation; Optical refraction; Optical waveguides; Quantum dot lasers; Quantum dots; Tunable circuits and devices; Voltage; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0930-3
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386080
