DocumentCode
2153131
Title
High Power silicon MMIC design for wireless base stations
Author
Bouisse, Gérard
Author_Institution
Motorola Semiconducteurs, Avenue du general Eisenhower, 31000 Toulouse-France. Gerard.Bouisse@motorola.com
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
3
Abstract
This article presents the specificities of high power silicon MMIC, intended for wireless base station applications. Motorola´s LDMOS technology, and its integrated version (HVIC), are presented, with emphasis on the particularities of high power functions. The technical problems linked to the design of multistages power amplifiers, of 1OW and 30W output power are listed, and solutions are proposed. Two power amplifier circuits, a 900 MHz 3stages 30W and a 1800MHz 3 stages 10W and their associated performances demonstrate the validity of these solutions.
Keywords
Base stations; FETs; Fingers; Impedance; MMICs; MOSFETs; Power amplifiers; Power generation; Power transmission lines; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338678
Filename
4139691
Link To Document