• DocumentCode
    2153131
  • Title

    High Power silicon MMIC design for wireless base stations

  • Author

    Bouisse, Gérard

  • Author_Institution
    Motorola Semiconducteurs, Avenue du general Eisenhower, 31000 Toulouse-France. Gerard.Bouisse@motorola.com
  • fYear
    2000
  • fDate
    Oct. 2000
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This article presents the specificities of high power silicon MMIC, intended for wireless base station applications. Motorola´s LDMOS technology, and its integrated version (HVIC), are presented, with emphasis on the particularities of high power functions. The technical problems linked to the design of multistages power amplifiers, of 1OW and 30W output power are listed, and solutions are proposed. Two power amplifier circuits, a 900 MHz 3stages 30W and a 1800MHz 3 stages 10W and their associated performances demonstrate the validity of these solutions.
  • Keywords
    Base stations; FETs; Fingers; Impedance; MMICs; MOSFETs; Power amplifiers; Power generation; Power transmission lines; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. 30th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.2000.338678
  • Filename
    4139691