DocumentCode :
2153131
Title :
High Power silicon MMIC design for wireless base stations
Author :
Bouisse, Gérard
Author_Institution :
Motorola Semiconducteurs, Avenue du general Eisenhower, 31000 Toulouse-France. Gerard.Bouisse@motorola.com
fYear :
2000
fDate :
Oct. 2000
Firstpage :
1
Lastpage :
3
Abstract :
This article presents the specificities of high power silicon MMIC, intended for wireless base station applications. Motorola´s LDMOS technology, and its integrated version (HVIC), are presented, with emphasis on the particularities of high power functions. The technical problems linked to the design of multistages power amplifiers, of 1OW and 30W output power are listed, and solutions are proposed. Two power amplifier circuits, a 900 MHz 3stages 30W and a 1800MHz 3 stages 10W and their associated performances demonstrate the validity of these solutions.
Keywords :
Base stations; FETs; Fingers; Impedance; MMICs; MOSFETs; Power amplifiers; Power generation; Power transmission lines; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
Type :
conf
DOI :
10.1109/EUMA.2000.338678
Filename :
4139691
Link To Document :
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