A phase and amplitude control front end chip in SiGe for phased-array C-band radar applications

Author

Thiesies, Heiko ; Berg, Håkan

Author_Institution

Antenna & Microwave Technol., Ericsson Microwave Syst., Molndal, Sweden

fYear

2005

fDate

12-17 June 2005

Abstract

This paper describes the first design run and measured results of a SiGe phase and amplitude controlling circuit for use in phased-array radar applications. The circuit was designed as a GaAs replacement study and results show that standard silicon germanium processes have sufficient performance to comply with radar requirements. MCM cost was the initial driver for this work and the possibility to integrate digital functions may prove to be the number one key factor to reduce this compared to GaAs based solutions.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; limiters; low noise amplifiers; multichip modules; phase control; phase shifters; phased array radar; power amplifiers; semiconductor materials; BiCMOS integrated circuits; SiGe; amplitude control front end chip; amplitude controlling circuit; phase control front end chip; phase controlling circuit; phase shifters; phased-array C-band radar; silicon germanium process; Circuits; Control systems; Differential amplifiers; Gallium arsenide; Germanium silicon alloys; Microwave technology; Phase shifters; Radar antennas; Radar applications; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516660

Filename

1516660