Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate

This paper shows the feasibility of implementing CMOS microwave oscillators on Silicon-on-Insulator (SOI) substrate at 5.8 and 12 GHz. The oscillators have been designed by introducing in a circuit simulator (SPICE) the SOI MOSFET´s models developed at our laboratory. The models and the fabrication process of 0.25 ¿m channel length Fully Depleted (FD) SOI MOSFET´s were not yet optimized for the first oscillator designs presented in this paper. However, the results show the potentiality of SOI CMOS technology for building low-power, low-voltage RF circuits.