Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV region

Author

Motogaito, Atsushi ; Ohta, Keiichi ; Watanabe, Hiromi ; Hiramatsu, Kazumsa ; Ohuchi, Youichiro ; Tadatomo, Karuyuki ; Hamamura, Yutaka ; Fukui, Kazutozhi

Author_Institution

Dept. of Electr. & Electron. Eng., Mie Univ., Tsu Mie, Japan

fYear

2002

fDate

11-13 Dec. 2002

Firstpage

107

Lastpage

110

Abstract

Responsivity spectra and electrical characteristics of GaN based Schottky type ultraviolet (UV) photodetectors with transparent electrode from the near UV region to the vacuum ultraviolet (VUV) region (3.4 to 25 eV) are described. In order to improve device performance in applying reverse bias, the annealed transparent Schottky electrode in N₂ ambient is used. The dark current of samples after annealing Schottky electrode is reduced by hundredth part of that of samples before annealing Schottky electrode. The responsivity spectra with reverse bias are improved by annealing Schottky electrode.

Keywords

III-V semiconductors; Schottky barriers; annealing; dark conductivity; electrodes; gallium compounds; photodetectors; ultraviolet detectors; ultraviolet spectra; wide band gap semiconductors; GaN; GaN based Schottky barrier; UV detectors; annealed Schottky electrode; dark current; device performance; electrical characteristics; responsivity spectra; reverse bias; transparent electrode; ultraviolet photodetectors; vacuum ultraviolet region; Annealing; Dark current; Detectors; Electric variables; Electrodes; Electromagnetic wave absorption; Gallium nitride; Photodetectors; Photodiodes; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on

ISSN

1097-2137

Print_ISBN

0-7803-7571-8

Type

conf

DOI

10.1109/COMMAD.2002.1237204

Filename

1237204