• DocumentCode
    2153375
  • Title

    A 2-Bit 4GS/s flash A/D converter in 0.18 μm CMOS for an IR-UWB communication system

  • Author

    Lu, Canxing ; Huang, Lu ; Li, Wenjia

  • Author_Institution
    Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1965
  • Lastpage
    1968
  • Abstract
    A 4 GS/s 2-bit non-time-interleaved flash ADC is designed for an IR-UWB (Impulse Radio Ultra Wide Band) receiver. In this flash ADC, implementing differential low-swing operation in analog part and CML (current mode logic) in digital part result in high-speed and low power consumption. Furthermore, because of the low-bit-sampling characteristic of the IR-UWB system, non-time-interleaved structure is used without digital calibration which largely saves the power consumption, chip area and cost. And a differential resistive reference ladder is designed to minimize the inaccuracy of the reference voltage. The proposed ADC dissipates 34 mW power from a 1.8 V supply while operating at 4 GHz. This chip has been fabricated in 0.18 μm 1P6M CMOS process and the ADC achieves 1.86-bit effective number of bits (ENOB) for input signal of 1 GHz at 4 GS/s in simulation of FFT analysis.
  • Keywords
    CMOS integrated circuits; Fourier transforms; analogue-digital conversion; optical communication; ultra wideband communication; CMOS; CMOS process; FFT analysis; IR-UWB; communication system; current mode logic; differential resistive reference; flash A/D converter; impulse radio ultra wide band receiver; low-bit-sampling; non-time-interleaved flash ADC; power 34 mW; size 0.18 mum; voltage 1.8 V; Analytical models; CMOS logic circuits; CMOS process; Calibration; Costs; Energy consumption; Receivers; Signal processing; Ultra wideband technology; Voltage; CML; UWB; flash ADC; low-swing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734946
  • Filename
    4734946