Microwave planar capacitors employing low loss, high-K, and tunable BZN thin films

Author

Park, Jaehoon ; Lut, J. ; Stemmer, Susanne ; York, Robert A.

Author_Institution

Mater. Dept., California Univ., Santa Barbara, CA, USA

fYear

2005

fDate

12-17 June 2005

Abstract

Planar capacitors having high Q factor and tunability were implemented with cubic pyrochlore Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films deposited by RF magnetron sputtering. Device Q factors (Q_DUT) and capacitances (C_DUT) were measured using reflection coefficients based on vector network analyzers on Vycor glass and sapphire substrates, respectively. Q factors (Q_int) accounting for electrode and dielectric losses remained above 200 up to 20 GHz and around 1000 up to several GHz for the smaller devices on sapphire substrate and there was no sign of onset of dielectric relaxations. With the electric field dependent permittivity, the BZN thin films can be the alternative to conventional BST thin films.

Keywords

bismuth alloys; dielectric relaxation; network analysers; permittivity; sapphire; sputtering; thin film capacitors; zinc alloys; 0.0000002 to 20 GHz; BZN thin film; BZN thin films; Bi_1.5Zn_1.0Nb_1.5O₇; RF magnetron sputtering; Vycor glass; conventional BST thin films; cubic pyrochlore; dielectric loss; dielectric properties; dielectric relaxations; electric field dependent permittivity; electrode; high Q factor; microwave planar capacitors; reflection coefficients; vector network analyzers; Capacitors; Dielectric devices; Dielectric losses; Dielectric substrates; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; Q factor; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1516673

Filename

1516673