DocumentCode
2153460
Title
Resistive Monolithic Q-Band HEMT Mixer for MVDS Applications
Author
Aja, B. ; de la Fuente, M. ; Garcia, J.A. ; Pascual, J.P. ; Artal, E.
Author_Institution
Dpto. Ing. de Comunicaciones. Universidad de Cantabria. SPAIN. beatriz@dicom.unican.es
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
3
Abstract
This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion loss and IMD performance. Transistor two-sided harmonic measurements across Vds and Vgs revealed the presence of IMD sweet spots that were used to optimize the conversion loss and IMD behavior of the mixer. Minimum conversion loss of 10 dB was measured in the 40.8-49 GHz RF frequency band, showing a reasonable agreement with simulation results. Mixer single-tone IMD was measured and simulated. The minimum output level at 3FIF was less than ¿102 dBm for an RF input level of ¿10 dBm and for a bias point near the predicted sweet spot.
Keywords
Circuits; Frequency conversion; Frequency measurement; HEMTs; Loss measurement; Mixers; Performance loss; Radio frequency; Radiofrequency amplifiers; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338693
Filename
4139706
Link To Document