Analysis of PBG structures using FDTD algorithm

Author

Gathre, Lalit ; Thottappan, M. ; Jain, P.K.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

fYear

2012

fDate

21-22 March 2012

Firstpage

825

Lastpage

827

Abstract

In this paper the Finite Difference Time Domain (FDTD) method has been used for computing the band structure of PBG structures using arrays of dielectric posts which were arranged in triangular manner. The dielectric materials like Silicon (Si), Gallium Arsenide (GaAs), and Sapphire (Si₃N₄) were considered for the numerical computation and the obtained numerical results of 2-D triangular lattice for TE mode has been compared with the plane wave expansion (PWE) method. The sources of error in FDTD calculations are well understood, and can be bounded to permit accurate models for a very large variety of electromagnetic problems. The global band diagram for silicon has also been discussed with respect to the filling fraction (r/a) values.

Keywords

dielectric materials; electromagnetism; finite difference time-domain analysis; gallium arsenide; photonic band gap; sapphire; silicon; silicon compounds; 2D triangular lattice; FDTD algorithm; GaAs; Si; Si₃N₄; dielectric material; dielectric post; electromagnetic problem; finite difference time domain method; gallium arsenide; global band diagram; numerical computation; photonic band gap structure; sapphire; silicon; Materials; Photonics; FDTD; PBG; filling fraction; triangular lattice;

fLanguage

English

Publisher

ieee

Conference_Titel

Computing, Electronics and Electrical Technologies (ICCEET), 2012 International Conference on

Conference_Location

Kumaracoil

Print_ISBN

978-1-4673-0211-1

Type

conf

DOI

10.1109/ICCEET.2012.6203870

Filename

6203870