DocumentCode
2153518
Title
4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station
Author
König, Frédy ; Shimizu, Haruo ; Takahashi, Hidenori ; Miyazawa, Shigemi ; Fukaya, Jun
Author_Institution
Fujitsu Microelectronics Europe Quantum Device Division, Network House, Maidenhead SL6 4FJ, UK.
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
3
Abstract
A three stage amplifier has been developed for PCS, EDGE and W-CDMA applications. Using the MESFET GaAs process of the Fujitsu foundry, we achieved a typical 30dB gain and 4 Watts output power. The input matches for a 50ohm system and the output used a pre-match circuit in order to increase its low impedance. This amplifier has a frequency range of 1.7Ghz to 2.3 Ghz.
Keywords
Base stations; Foundries; Gallium arsenide; Impedance matching; MESFETs; MMICs; Multiaccess communication; Personal communication networks; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338695
Filename
4139708
Link To Document