Title :
4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station
Author :
König, Frédy ; Shimizu, Haruo ; Takahashi, Hidenori ; Miyazawa, Shigemi ; Fukaya, Jun
Author_Institution :
Fujitsu Microelectronics Europe Quantum Device Division, Network House, Maidenhead SL6 4FJ, UK.
Abstract :
A three stage amplifier has been developed for PCS, EDGE and W-CDMA applications. Using the MESFET GaAs process of the Fujitsu foundry, we achieved a typical 30dB gain and 4 Watts output power. The input matches for a 50ohm system and the output used a pre-match circuit in order to increase its low impedance. This amplifier has a frequency range of 1.7Ghz to 2.3 Ghz.
Keywords :
Base stations; Foundries; Gallium arsenide; Impedance matching; MESFETs; MMICs; Multiaccess communication; Personal communication networks; Power amplifiers; Power generation;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338695
