Title :
High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications
Author :
Betti-Berutto, A. ; Poledrelli, C. ; Benelbar, R. ; Chen, S.T. ; Khandavalli, C. ; Satoh, T. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J.
Author_Institution :
Fujitsu Compound Semiconductor Inc., San Jose, CA, USA. aberutto@fcsi.fujitsu.com
Abstract :
Recent commercial wireless applications such as Point to Point radio links, LMDS (Local Multipoint Distribution Service), LMCS (Local multi-point Communications Service) and Commercial K-Band Satellite based services have spurred significant activity in development of mmWave power amplifiers. These applications lie in the frequency range of 18 to 42GHz with possible future extensions to 60GHz. These systems employ digital modulation schemes for which highly linear mmWave power amplifiers are essential. This paper presents an overview of some chipsets consisting of High Power amplifiers covering the frequency range of 18 to 32GHz. Preferred solutions to a low cost subsystem vary from one subsystem manufacturer to another as it involves assembly and test capabilities in addition to component costs. The overall direction appears to be toward multi-chip module assemblies. Here, both chip and packaged level component options are considered.
Keywords :
Artificial satellites; Assembly; Costs; Frequency; Gallium arsenide; High power amplifiers; K-band; MMICs; Radio link; Satellite broadcasting;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338696