DocumentCode
2153581
Title
A novel NVRAM cell technology for high density applications
Author
Yasmauchi, Y. ; Tanaka, K. ; Sakiyama, K.
Author_Institution
Sharp Corp., Nara, Japan
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
416
Lastpage
419
Abstract
A novel nonvolatile random-access memory (NVRAM) cell is proposed for high-density applications. This cell combines dynamic RAM performance with the nonvolatility of an EEPROM (electrically erasable programmable read-only memory) and permits the simultaneous transfer of all dynamic RAM data on the chip to the EEPROM. The data transfer is completed in less than 10 ms. The single-cell endurance exceeds 10/sup 5/ store cycles. A cell 79- mu m/sup 2/ in size is realized using 1.2- mu m process technology. The charge retention characteristic is favorable for 256-kb dynamic RAM operation.<>
Keywords
EPROM; integrated memory circuits; random-access storage; 1.2 micron; 256 kbit; EEPROM; NVRAM cell technology; charge retention characteristic; data transfer; dynamic RAM performance; high density applications; nonvolatile RAM; single-cell endurance; Capacitance; Capacitors; DRAM chips; Dielectric thin films; EPROM; Nonvolatile memory; Random access memory; Read-write memory; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32844
Filename
32844
Link To Document