Title :
Bulk and surface textured MoS2 films on GaAs
Author :
Jakovidis, G. ; Jamieson, I.M. ; Pavlov, K.M. ; Singh, A.
Author_Institution :
Sch. of Phys. & Mater. Eng., Monash Univ., Clayton, Vic., Australia
Abstract :
Highly oriented MoS2 films on GaAs, suitable for photovoltaic applications, have been obtained using radio frequency (RF)-sputtering. Depositions at 800°C exhibit strong [00l] X-ray reflections, indicative of bulk type II texture. Atomic force microscopy (AFM) reveals the orientation of surface platelets for films grown at 800°C and 80°C, to be consistent with the X-ray data. This study demonstrates that provided the RF-power is kept low (50 W) and the temperature high, well textured type II films up to 500 nm can be deposited, without the need to resort to expensive vapor transport techniques.
Keywords :
X-ray reflection; atomic force microscopy; molybdenum compounds; photovoltaic effects; sputter deposition; sputtered coatings; surface texture; 50 W; 800 degC; GaAs; MoS; X-ray reflections; atomic force microscopy; bulk textured films; bulk type II texture; highly-oriented films; photovoltaic applications; radio frequency-sputtering; surface platelets; surface textured films; vapor transport techniques; well textured type II films; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Gallium arsenide; Optical films; Photovoltaic systems; Radio frequency; Reflection; Solar power generation; Surface texture;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237223
