DocumentCode
2153736
Title
A low-voltage voltage doubler without body effect
Author
Li, Ming ; Yang, Li-wu ; Kang, Jinfeng ; Wang, Yangyuan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
2020
Lastpage
2023
Abstract
A voltage doubler, which avoids body effect and then improves rise time and efficiency even with 1 V power supply, is presented. This art is designed for word line boosting, using 0.18 um EEPROM technology. Not only the voltage doubler can work with capacitive load normally, but also it can supply load current and achieve higher efficiency. The whole circuit can be implemented on chip and is suitable for low voltage application. In addition, theoretical analysis and simulation results have been given.
Keywords
EPROM; low-power electronics; voltage multipliers; EEPROM technology; body effect; rise time; size 0.18 mum; voltage 1 V; voltage doubler; word line boosting; Boosting; Charge pumps; Circuit simulation; EPROM; Low voltage; MOSFETs; Microelectronics; Power supplies; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734962
Filename
4734962
Link To Document