• DocumentCode
    2153786
  • Title

    A Gate Bias Free Power MMIC Module for Ka-Band High-speed Wireless Applications

  • Author

    Ichikawa, S. ; Satoh, T. ; Shimura, T. ; Betti-Berutto, A. ; Furukawa, Y. ; Hasegawa, Y. ; Kuroda, S. ; Fukaya, J.

  • Author_Institution
    Fujitsu Quantum Devices Ltd., Kokubo Kogyo Danchi, Showa, Nakakoma, Yamanashi 409-3883, JAPAN
  • fYear
    2000
  • fDate
    Oct. 2000
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A high power and high gain packaged power MMIC module for Ka-band applications operating under a single polarity bias supply has been developed for the first time. This PA module consists of two pseudomorphic HEMT MMICs, with Lg=0.25um, packaged in a single power module. These MMICs operate without a gate bias control voltage when the gate bias is shunted in the package. This PA module provides 30dBm output power and approximately 30dB of gain in the 27-31GHz range. The single bias supply operation provides significant cost advantage to the device manufacture as well as the end user since there is no need to design a gate control bias network.
  • Keywords
    Costs; Driver circuits; MMICs; Manufacturing; Multichip modules; PHEMTs; Power generation; Radio frequency; Semiconductor device packaging; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. 30th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.2000.338706
  • Filename
    4139719