DocumentCode
2153839
Title
A 5-volt contactless array 256 kbit flash EEPROM technology
Author
Gill, M. ; Cleavelin, R. ; Lin, S. ; D´Arrigo, I. ; Santin, G. ; Shah, Parikshit ; Nguyen, A. ; Esquivel, J. ; Riemenschneider, B. ; Paterson, J.
Author_Institution
Texas Instrum. Inc., Houston, TX, USA
fYear
1988
fDate
11-14 Dec. 1988
Firstpage
428
Lastpage
431
Abstract
A contactless cell array technology has been developed for a single-power-supply 5V-only CMOS flash EEPROM (electrically erasable programmable read-only memory). The technology´s suitability for VLSI memories has been demonstrated by a 256-kb flash EEPROM test vehicle. This low-current approach has been realized with cell area and cost comparable to those of the recently reported dual-power-supply flash EEPROMs.<>
Keywords
CMOS integrated circuits; PROM; VLSI; integrated circuit technology; integrated memory circuits; 256 kbit; 5 V; VLSI memories; cell area; contactless cell array technology; cost; electrically erasable programmable read-only memory; flash EEPROM; low-current; single-power-supply; CMOS technology; Costs; EPROM; Instruments; Nonvolatile memory; Power supplies; Secondary generated hot electron injection; Tunneling; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1988.32847
Filename
32847
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