A charge pump circuit design based on a 0.35μm BCD technology for high voltage driver applications

Author

Wei, Henru ; Cheng, Yuhua

Author_Institution

Shanghai Res. Inst. of Microelectron., Peking Univ., Peking, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

2035

Lastpage

2038

Abstract

A symmetrical charge pump circuit for DC-DC converters is presented in this paper. With a typical +12 V input achieved by high-voltage CMOS devices, the charge pump circuit can generate an output voltage higher than +30 V. The circuit is designed based on ASMC 0.35 μm BCD technology. The results show that the designed pumping circuit can drive a large current more efficiently, and the ripple voltage of the output is lower with two anti-phase clocks. This circuit can be used in many high voltage driver applications.

Keywords

BIMOS integrated circuits; CMOS integrated circuits; DC-DC power convertors; charge pump circuits; driver circuits; integrated circuit design; integrated circuit technology; BCD technology; DC-DC converters; anti-phase clocks; charge pump circuit design; high voltage driver applications; high-voltage CMOS devices; ripple voltage; size 0.35 μm; voltage 12 V; Charge pumps; Circuit synthesis; Clocks; DC-DC power converters; Diodes; Driver circuits; Inverters; MOSFETs; Parasitic capacitance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734966

Filename

4734966