Title :
A charge pump circuit design based on a 0.35μm BCD technology for high voltage driver applications
Author :
Wei, Henru ; Cheng, Yuhua
Author_Institution :
Shanghai Res. Inst. of Microelectron., Peking Univ., Peking, China
Abstract :
A symmetrical charge pump circuit for DC-DC converters is presented in this paper. With a typical +12 V input achieved by high-voltage CMOS devices, the charge pump circuit can generate an output voltage higher than +30 V. The circuit is designed based on ASMC 0.35 μm BCD technology. The results show that the designed pumping circuit can drive a large current more efficiently, and the ripple voltage of the output is lower with two anti-phase clocks. This circuit can be used in many high voltage driver applications.
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; DC-DC power convertors; charge pump circuits; driver circuits; integrated circuit design; integrated circuit technology; BCD technology; DC-DC converters; anti-phase clocks; charge pump circuit design; high voltage driver applications; high-voltage CMOS devices; ripple voltage; size 0.35 μm; voltage 12 V; Charge pumps; Circuit synthesis; Clocks; DC-DC power converters; Diodes; Driver circuits; Inverters; MOSFETs; Parasitic capacitance; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734966
