DocumentCode
2153872
Title
A force balance approach to determining dislocation configurations
Author
Madebo, M. ; Usher, B.F. ; Riley, J.D.
Author_Institution
Dept. of Phys., La Trobe Univ., Bundoora, Vic., Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
209
Lastpage
212
Abstract
A methodology which enables the calculation of threading dislocation configurations for arbitrary multi-layered structures is presented. This methodology includes strain and employs a force-balance approach to attain the equilibrium configuration. This allows technologically important properties of multi-layered structures, such as critical thickness, to be determined.
Keywords
dislocations; mechanical variables measurement; multilayers; semiconductor quantum wells; thickness measurement; critical thickness; dislocation configurations; equilibrium configuration; force balance approach; force-balance approach; multilayered structures; strain; threading dislocation configurations calculation; Atomic layer deposition; Epitaxial growth; Force measurement; Gallium arsenide; Iron; Physics; Quantum well devices; Semiconductor process modeling; Substrates; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237229
Filename
1237229
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