Title :
Selective growth of aluminum using a novel CVD system
Author :
Amazawa, T. ; Nakamura, H. ; Arita, Y.
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
Selective growth of aluminum with smooth surface topography is realized using a double-wall CVD (chemical vapor deposition) system in which the substrate is positioned between two heaters with different temperatures. Aluminium is deposited selectively onto silicon, metals, and silicides of the substrate; no deposition occurs on the SiO/sub 2/ surface. This technique is available for filling high-aspect via holes in multilevel metallization systems. Al/polySi two-layer interconnections with 0.4- mu m-diameter via holes have been successfully fabricated using selective aluminum deposition and a self-aligned TiSi/sub 2/ formation technique.<>
Keywords :
VLSI; aluminium; chemical vapour deposition; metallisation; 400 nm; Al-Si; CVD system; chemical vapor deposition; double wall CVD system; filling high-aspect via holes; multilevel metallization systems; salicide; selective deposition of Al; self-aligned TiSi/sub 2/ formation technique; silicides; smooth surface topography; Aluminum; Insulation; Silicon; Substrates; Surface resistance; Surface topography; Tellurium; Temperature; Titanium; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32850
