Title :
A high efficiency, high voltage, balanced cascode FET
Author :
Inoue, Akira ; Goto, Seiki ; Kunii, Tetsuo ; Ishikawa, Takahide ; Matsuda, Yoshio
Author_Institution :
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.
Keywords :
III-V semiconductors; circuit optimisation; gallium arsenide; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; 2.1 GHz; 78.2 percent; GaAs; HFET; balance capacitor; balanced cascode FET; high voltage power amplifiers; high-voltage techniques; low breakdown voltage transistors; microwave amplifiers; Breakdown voltage; Capacitors; FETs; Feedback circuits; Gallium arsenide; HEMTs; High power amplifiers; MODFETs; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1516694
