DocumentCode
2153944
Title
A high efficiency, high voltage, balanced cascode FET
Author
Inoue, Akira ; Goto, Seiki ; Kunii, Tetsuo ; Ishikawa, Takahide ; Matsuda, Yoshio
Author_Institution
High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan
fYear
2005
fDate
12-17 June 2005
Abstract
A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.
Keywords
III-V semiconductors; circuit optimisation; gallium arsenide; high electron mobility transistors; microwave field effect transistors; microwave power amplifiers; 2.1 GHz; 78.2 percent; GaAs; HFET; balance capacitor; balanced cascode FET; high voltage power amplifiers; high-voltage techniques; low breakdown voltage transistors; microwave amplifiers; Breakdown voltage; Capacitors; FETs; Feedback circuits; Gallium arsenide; HEMTs; High power amplifiers; MODFETs; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1516694
Filename
1516694
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