A selective CVD tungsten local interconnect technology

A novel local interconnect technology utilizing polysilicon strapped with selective CVD (chemical vapor deposition) tungsten (W) has been developed for advanced CMOS applications. Problems associated with etching of a local interconnect material do not exist, since the local interconnects are of polysilicon and defined at the same level as the gate electrodes. CVD W deposited on the polysilicon serves as a very attractive gate shunt and local interconnect because of its low resistivity and ability to carry a high-density current reliably. Both n- and p-channel MOSFETs have been successfully fabricated with this technology. An alternate version of this technology utilizing a second polysilicon layer for the formation of the local interconnects is also discussed.<>