Title :
Properties of Ga-Zn based mixed oxides for gas sensing applications
Author :
Trinchi, A. ; Galatsis, K. ; Li, Y.X. ; Wlodarski, W. ; Russo, S.P. ; du Plesis, J. ; Rout, B.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia
Abstract :
Gallium-Zinc mixed metal oxides have been fabricated by the sol-gel process and tested towards oxygen gas. These films were deposited on alumina transducers with interdigital electrodes for gas sensing measurements and on single crystal silicon substrates for microcharacterization. X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering Spectrometry (RBS) showed that the actual concentrations in Ga-Zn oxide thin films differ from the nominal values in the prepared solutions as a function of annealing temperature. Furthermore, the concentration of Zn decreases with a rise of sample annealing temperature. It was found that by increasing the amount of Zn in the sensor film, the operating temperature decreased as well as the base resistance.
Keywords :
Rutherford backscattering; X-ray photoelectron spectra; alumina; annealing; chemical variables measurement; gallium compounds; gas sensors; oxygen; semiconductor thin films; sol-gel processing; transducers; wide band gap semiconductors; zinc compounds; Ga-Zn based mixed oxides; Ga-Zn oxide thin films; Ga2O3-ZnO-Si; Rutherford backscattering spectrometry; Si; X-ray photoelectron spectroscopy; XPS; alumina transducers; annealing temperature; base resistance; gallium-zinc mixed metal oxides; gas sensing applications; gas sensing measurements; interdigital electrodes; microcharacterization; oxygen gas; sensor film; single crystal silicon substrates; sol-gel process; Annealing; Electrodes; Semiconductor films; Silicon; Spectroscopy; Substrates; Temperature sensors; Testing; Transducers; Zinc;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237233
