In-situ carbon-doped aluminum metallization for VLSI/ULSI interconnections

Author

Kato, T. ; Ito, T. ; Ishikawa, H.

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

458

Lastpage

461

Abstract

Reliable Al metallization has been performed using a plasma CVD (chemical vapor deposition) technique. In-situ doping of carbon onto an Al film suppresses the growth of Al crystal grains, hillocks and spikes. MTFs (median times to failure) of the films due to electromigration are one order of magnitude greater than that of a pure Al film. The resistivity is reduced by a factor of 3 to 4 when carbon-doped Al is cooled from room to liquid-nitrogen temperature. Al films with mirror surface and fine grains are suitable for reliable VLSI/ULSI (ultra large scale integration) metallization.<>

Keywords

VLSI; aluminium; carbon; chemical vapour deposition; metallisation; reliability; 300 K; 77 K; Al:C metallisation; ULSI; VLSI; chemical vapor deposition; electromigration; fine grains; hillock growth suppression; median times to failure; mirror surface; plasma CVD; reliability; resistivity; ultra large scale integration; Aluminum; Chemical vapor deposition; Conductivity; Doping; Electromigration; Metallization; Plasma chemistry; Plasma temperature; Ultra large scale integration; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32854

Filename

32854