Title :
Selective area epitaxy for photonic integrated circuits and advanced devices
Author :
Coleman, I.J. ; Swint, R.B. ; Yeoh, T.S. ; Elarde, V.C.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
Using metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE) it is possible to grow different layer thicknesses and compositions on different areas of a wafer in a single growth step. This makes possible the integration of discrete devices and enables the fabrication of advanced devices.
Keywords :
MOCVD; integrated optics; integrated optoelectronics; vapour phase epitaxial growth; MOCVD; advanced device fabrication; advanced devices; discrete devices; layer thicknesses; metal-organic chemical vapor deposition; optoelectronic devices; photonic integrated circuits; selective area epitaxy; wafer; Chemical vapor deposition; Communication networks; Cost function; Epitaxial growth; Etching; Integrated circuit modeling; MOCVD; Molecular beam epitaxial growth; Optical device fabrication; Photonic integrated circuits;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237237
