Atomic layer epitaxy for the growth of heterostructures

The atomic layer epitaxial (ALE) growth of thin GaAs layers and their inclusion in quantum well devices is described. Uniform, high-quality materials have been grown by a modification of the MOCVD process that allows a single-monolayer control over layer thickness by relying on surface-controlled processes. Laser excitation has been used during ALE growth to deposit ultrathin layers of GaAs layers selectively and to form buried heterostructures. The growth techniques, materials and device properties, and applications to new areas are described.<>