Title :
High speed optical taps on InP waveguides
Author :
Chan, W.K. ; Abeles, J.H. ; Nguyen, K.C. ; Bhat, R. ; Koza, M.A.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
The high-speed operation of an optical tap on InP waveguides using an InGaAs p-i-n photodetector has been demonstrated. For a 300- mu m-long tap that samples 19% of the light propagating in a 7- mu m-wide waveguide, the response time is 50 ps with a 1-V reverse bias. This speed is limited by the RC time constant. The taps require a single epitaxial growth and can be readily integrated with directional coupler switches and other optoelectronic devices for multi-GHz optical signal processing.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; photodiodes; semiconductor epitaxial layers; 1 V; 300 micron; 50 ps; 7 micron; InGaAs p-i-n photodetector; InGaAs-InP; InP waveguides; RC time constant; high-speed operation; integrated with directional coupler switches; multi-GHz optical signal processing; optical taps; optoelectronic devices; response time; reverse bias; semiconductors; single epitaxial growth; Delay; Epitaxial growth; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical propagation; Optical signal processing; Optical waveguides; PIN photodiodes; Photodetectors;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32858
