High speed optical taps on InP waveguides

Author

Chan, W.K. ; Abeles, J.H. ; Nguyen, K.C. ; Bhat, R. ; Koza, M.A.

Author_Institution

Bellcore, Red Bank, NJ, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

475

Lastpage

478

Abstract

The high-speed operation of an optical tap on InP waveguides using an InGaAs p-i-n photodetector has been demonstrated. For a 300- mu m-long tap that samples 19% of the light propagating in a 7- mu m-wide waveguide, the response time is 50 ps with a 1-V reverse bias. This speed is limited by the RC time constant. The taps require a single epitaxial growth and can be readily integrated with directional coupler switches and other optoelectronic devices for multi-GHz optical signal processing.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; photodiodes; semiconductor epitaxial layers; 1 V; 300 micron; 50 ps; 7 micron; InGaAs p-i-n photodetector; InGaAs-InP; InP waveguides; RC time constant; high-speed operation; integrated with directional coupler switches; multi-GHz optical signal processing; optical taps; optoelectronic devices; response time; reverse bias; semiconductors; single epitaxial growth; Delay; Epitaxial growth; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical propagation; Optical signal processing; Optical waveguides; PIN photodiodes; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32858

Filename

32858