Title :
Growth and characterization of GaAsN bulk layer and (In)GaAsN quantum-well structures
Author :
Gao, Q. ; Tan, H.H. ; Jagadish, C. ; Sun, B.Q. ; Gal, M. ; Ouyang, L. ; Zou, J.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In this paper, we review our recent results from studies of growth and optical properties of GaAsN bulk epilayers and (In)GaAsN structures by using double crystal X-ray diffraction (DCXRD), photoluminescence (PL) and cross-sectional transmission electron microscopy (XTEM). We discuss the optimal growth conditions for obtaining high crystal quality GaAsN epilayers and (In)GaAsN/GaAs quantum well (QW) structures with high nitrogen composition. A newly designed GaAsN (QW) structure with multiple-InAs monolayers and 1.3 μm InGaAsN quantum well structure are also presented.
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; indium compounds; infrared spectra; monolayers; photoluminescence; semiconductor epitaxial layers; semiconductor quantum wells; transmission electron microscopy; (In)GaAsN/GaAs quantum well (QW) structures; 1.3 μm InGaAsN quantum well structure; 1.3 mum; DCXRD; GaAsN; GaAsN bulk layer; In)GaAsN quantum-well structures; InGaAsN-GaAs; XTEM; cross-sectional transmission electron microscopy; double crystal X-ray diffraction; high crystal quality GaAsN epilayers; high nitrogen composition; multiple-InAs monolayers; optical properties; photoluminescence; Gallium arsenide; Heterojunction bipolar transistors; Laser theory; Nitrogen; Optical microscopy; Photoluminescence; Quantum wells; Semiconductor lasers; Temperature; Transmission electron microscopy;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237238
