Waveguide integrated MSM photodetector for the 1.3 mu m-1.6 mu m wavelength range

The authors present a novel waveguide-integrated photodetector structure and give results of its implementation in the InP/InGaAs material system. The detector is suitable for the 1.3-1.6- mu m wavelength range, which is important in communications. It consists of a planar interdigitated metal-semiconductor-metal (MSM) Schottky barrier InGaAs detector monolithically integrated with a ridge waveguide. The InGaAs detector uses a thin layer of GaAs to enhance the Schottky barrier height. Internal quantum efficiencies of around 80% and a pulse response of 150 ps (FWHM) have been obtained. The authors discuss the factors limiting the response time of the device and consider its suitability as the front end of a fully integrated receiver.<>