Title :
Strong red light emission from silicon nanocrystals embedded in SiO2 matrix
Author :
Chen, W.D. ; Wang, Y.Q. ; Chen, C.Y. ; Diao, H.W. ; Liao, X.B. ; Kong, G.L. ; Hsu, C.C.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
In this study, silicon nanocrystals embedded in SiO2 matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250 °C to RT, the PL intensity increases by two orders of magnitude.
Keywords :
Fourier transform spectra; Raman spectra; X-ray photoelectron spectra; annealing; crystal microstructure; elemental semiconductors; high-temperature techniques; infrared spectra; nanostructured materials; optical films; photoluminescence; plasma CVD; silicon; silicon compounds; transmission electron microscopy; 250 to 25 degC; Fourier transform infrared spectroscopy; PECVD; PL intensity; Si; SiO2 matrix; SiO2-Si; annealing temperature; conventional plasma enhanced chemical vapor deposition; high resolution transmission electron microscopy; high temperature annealing; micro-Raman spectra; microstructural properties; optical properties; oxygen content; room temperature; silicon nanocrystals; strong red light emission; substrate temperature; x-ray photoelectron spectroscopy; Annealing; Chemical vapor deposition; Electron optics; Nanocrystals; Optical microscopy; Plasma chemistry; Plasma properties; Plasma temperature; Plasma x-ray sources; Silicon;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237243
