Low-field mobility enhancement in AlGaAs/GaAs/AlGaAs double-heterojunction structures

Author

Tomizawa, Masaaki ; Furuta, Tomofumi ; Yokoyama, Kiyoyuki ; Yoshii, Akira

Author_Institution

LSI Lab., NTT, Kanagawa, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

500

Lastpage

503

Abstract

Two-dimensionally-quantized electron transport in modulation-doped double-heterojunction structures is investigated using a Monte Carlo simulation. Enhanced low-field mobility in the quantum well is observed. This results from the reduction of optical phonon scattering rates, which can be attributed to the spread of the two-dimensional electron gas. It is demonstrated that the carrier transport related to this enhancement and carrier confinement effectively contribute to device operation in a double-heterojunction FET.<>

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor junctions; 2D quantised electron gas; AlGaAs-GaAs-AlGaAs; HEMT; Monte Carlo simulation; carrier confinement; carrier transport; device operation; double-heterojunction FET; low field mobility enhancement; modulation-doped double-heterojunction structures; quantum well; reduction of optical phonon scattering; semiconductors; two-dimensional electron gas; DH-HEMTs; Electron mobility; Electron optics; Epitaxial layers; Gallium arsenide; High speed optical techniques; Impurities; Optical modulation; Optical scattering; Particle scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32864

Filename

32864