• DocumentCode
    2154323
  • Title

    Prospective for nanowire transistors

  • Author

    Colinge, J.-P. ; Dhong, Sang H.

  • Author_Institution
    Taiwan Semicond. Manuf. Co. Ltd. (TSMC), Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    22-25 Sept. 2013
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    The multigate nanowire FET architecture allows for ultimate short-channel control and push Moore´s law down to sub-5nm gate lengths. This paper reviews nanowire transistor device physics as well as circuit prospects in the fields of CMOS logic, memory, analog, RF and integrated sensor applications.
  • Keywords
    field effect transistors; nanoelectronics; nanowires; CMOS logic; Moore law; RF; analog; circuit prospects; gate lengths; integrated sensor applications; memory; nanowire transistor device physics; size 5 nm; Logic gates; MOSFET; Nanoscale devices; Performance evaluation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2013 IEEE
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • DOI
    10.1109/CICC.2013.6658401
  • Filename
    6658401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2154323