Title :
Prospective for nanowire transistors
Author :
Colinge, J.-P. ; Dhong, Sang H.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd. (TSMC), Hsinchu, Taiwan
Abstract :
The multigate nanowire FET architecture allows for ultimate short-channel control and push Moore´s law down to sub-5nm gate lengths. This paper reviews nanowire transistor device physics as well as circuit prospects in the fields of CMOS logic, memory, analog, RF and integrated sensor applications.
Keywords :
field effect transistors; nanoelectronics; nanowires; CMOS logic; Moore law; RF; analog; circuit prospects; gate lengths; integrated sensor applications; memory; nanowire transistor device physics; size 5 nm; Logic gates; MOSFET; Nanoscale devices; Performance evaluation; Silicon;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
DOI :
10.1109/CICC.2013.6658401
