Title :
A 70-GHz Bandwidth and 9-dB Gain Travelling Wave Amplifier Using 0.15-μm Gate InGaP/InGaAs HEMTs with Coplanar Transmission Line Technology
Author :
Sato, Masaru ; Hirose, Tatsuya ; Watanabe, Yuu
Author_Institution :
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, Japan. E-mail: masaru@kahan.flab.fujitsu.co.jp
Abstract :
We developed a technique to reduce gain variations over a wide frequency range for an ultra-broadband travelling wave amplifier (TWA) that employs a cascode configuration using 0.15-μm gate InGaP/InGaAs HEMTs. Using this technique, we achieved gain variations within 1.5 dB for frequencies up to 70 GHz with a 9-dB gain. The agreement of measured S-parameters with simulated results demonstrates that the proposed technique is suitable for broadband amplifier design.
Keywords :
Bandwidth; Broadband amplifiers; Coplanar transmission lines; Cutoff frequency; HEMTs; Impedance; Indium gallium arsenide; MODFETs; Optical amplifiers; Power transmission lines;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338729