DocumentCode
2154431
Title
One-dimensional ballistic conductors under high pressure
Author
Newbury, R. ; Wirtz, R. ; Cochrane, J. ; Kemp, N.T. ; Nicholls, J.T. ; Tribe, W.R. ; Simmons, M.Y. ; Pepper, M.
Author_Institution
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
fYear
2002
fDate
11-13 Dec. 2002
Firstpage
299
Lastpage
302
Abstract
We have used hydrostatic pressure and controlled illumination to investigate the one-dimensional quantized conductance of ballistic channels formed by split-gates on high quality GaAs/AlGAsAs single hetero-interfaces.
Keywords
III-V semiconductors; aluminium compounds; ballistic transport; electric admittance; gallium arsenide; high-pressure effects; one-dimensional conductivity; two-dimensional electron gas; GaAs-AlGaAs; ballistic channels; controlled illumination; high pressure; high quality GaAs/AlGAsAs single heterointerfaces; hydrostatic pressure; one-dimensional ballistic conductors; one-dimensional quantized conductance; semiconductor channels; split-gates; Bonding; Conductors; Electrons; Gallium arsenide; Laboratories; Lattices; Magnetic field measurement; Magnetic fields; Physics; Split gate flash memory cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
ISSN
1097-2137
Print_ISBN
0-7803-7571-8
Type
conf
DOI
10.1109/COMMAD.2002.1237250
Filename
1237250
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