Title :
One-dimensional ballistic conductors under high pressure
Author :
Newbury, R. ; Wirtz, R. ; Cochrane, J. ; Kemp, N.T. ; Nicholls, J.T. ; Tribe, W.R. ; Simmons, M.Y. ; Pepper, M.
Author_Institution :
Sch. of Phys., New South Wales Univ., Sydney, NSW, Australia
Abstract :
We have used hydrostatic pressure and controlled illumination to investigate the one-dimensional quantized conductance of ballistic channels formed by split-gates on high quality GaAs/AlGAsAs single hetero-interfaces.
Keywords :
III-V semiconductors; aluminium compounds; ballistic transport; electric admittance; gallium arsenide; high-pressure effects; one-dimensional conductivity; two-dimensional electron gas; GaAs-AlGaAs; ballistic channels; controlled illumination; high pressure; high quality GaAs/AlGAsAs single heterointerfaces; hydrostatic pressure; one-dimensional ballistic conductors; one-dimensional quantized conductance; semiconductor channels; split-gates; Bonding; Conductors; Electrons; Gallium arsenide; Laboratories; Lattices; Magnetic field measurement; Magnetic fields; Physics; Split gate flash memory cells;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2002 Conference on
Print_ISBN :
0-7803-7571-8
DOI :
10.1109/COMMAD.2002.1237250
